Day 3 at IMS: GaN-on-SiC Power Amps

Day 3 at IMS: GaN-on-SiC Power Amps

Microwaves & RF
provided ongoing coverage of news and developments from this week’s International Microwave Symposium (IMS) in Washington, D.C. Here’s today’s update about a new product exhibited by dB Control in Booth 2112:

If you’ve come to IMS looking for amplifiers, the dB-8048 GaN solid-state power amplifier operates from 2.9 to 3.3 GHz, delivers 1.5 kW of peak output power in pulsed operation with instantaneous pulse operation over the entire band, and has a duty cycle up to 10%. The amplifier also provides a 0.5- µs pulse width and 50-Ω input/output impedance. A modular design and scalable architecture allow for phase combining to achieve up to 6 kW and 10 kW output power. Small and lightweight with built-in fan cooling, the dB-8048 is designed for high-performance MIL-STD applications such as radars; high-resolution SAR systems; and ground, naval, and airborne platforms where high reliability and ruggedness are critical to system performance.


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