As GaN Pushed Ahead, the TWT Remains in a Solid State
When the Department of Defense demands the development of a new technology it almost invariably gets what it wants, albeit after a considerable outlay of cash. In the domain of microwave power generation, DoD’s latest fair-haired boy is Gallium Nitride (GaN), a wide bandgap compound semiconductor material that delivers higher power density per millimeter of gate length over a broader swath of spectrum than any other solid-state technology.
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